کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1543813 | 1512873 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Photoluminescence (PL) properties of two different InGaN/GaN multiple quantum well (MQW) structures, without and with an InGaN/GaN quasi-superlattice (QSL) underlying buffer layer, were investigated. The results show that inserting a QSL between the n-GaN and MQWs can release the strain in the MQW region, since the sample with a QSL shows a smaller excitation power-dependent blue-shift of its peak energy than that without. Meanwhile, inserting a QSL enhances the localization effect of the carriers inferred from an unusual red-shift of the peak energy with increasing excitation power in low excitation range, and from a more obvious “S-shaped” temperature-dependent behavior of the peak energy characteristic: the strain release facilitates the slight composition fluctuation or phase separation of the InGaN well layers. The reduction of the quantum-confined Stark effect and enhancement of the localization effect of the MQWs induced by the strain release, greatly enhance the radiative recombination rate of the MQWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 76, February 2016, Pages 1-5
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 76, February 2016, Pages 1-5
نویسندگان
Qi Mu, Mingsheng Xu, Xuesong Wang, Qiang Wang, Yuanjie Lv, Zhihong Feng, Xiangang Xu, Ziwu Ji,