Anomalous dephasing scattering time of Zr80Sn20−xFex alloys at low temperature

• A minima has been observed on the resistivity versus temperatures curve.
• The low temperature resistivity in absence of magnetic field obeys the ρo5/2T1/2 law.
• The spin–orbit interaction is strong and independent of temperature.
• The zero temperature scattering rate increases with increase of lele.
• The inelastic scattering rate obeys an anomalous behavior τe−ph−1∝T2le.

We report the results of a comprehensive study of weak electron localization (WEL) and electron–electron interaction (EEI) effects in disordered Zr80Sn20−xFex alloys. The resistivity in absence of magnetic field shows a minimum at temperature T=Tm and follows ρo5/2T1/2 law within the temperature range 5 K≤T≤Tm  , which suggests predominant EEI effect. Magnetoresistivity is positive due to strong spin–orbit interaction. The dephasing scattering time is dominated by the electron–phonon scattering. The electron–phonon scattering rate shows anomalous behavior and obeys the relation τe−ph−1∝T2le, where lele is the electron elastic mean free path. The zero temperature scattering time (τ0)(τ0) strongly depends on the disorder and its magnitude decreases with increasing disorder resistivity ρ0ρ0. Such anomalous behavior cannot be explained in terms of existing theories.

The electron–phonon scattering rate shows anomalous behavior and obeys the relation τe−ph−1∝T2le, where lele is the electron elastic mean free path.Figure optionsDownload as PowerPoint slide