Angular dependent study on spin transport in magnetic semiconductor heterostructures with Dresselhaus spin–orbit interaction

• We investigate the effect of Dresselhaus spin-orbit coupling (DSOC) on the spin-dependent current and shot noise theoretically.
• Our method is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field and also applied voltage.
• We calculate the dependence of current density, shot noise and Fano factor on the relative angle between the magnetization of two electrodes for sevral different Dresselhaus constants.

We investigate theoretically the effects of Dresselhaus spin–orbit coupling (DSOC) on the spin-dependent current and shot noise through II–VI diluted magnetic semiconductor/nonmagnetic semiconductor (DMS/NMS) barrier structures. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction and also applied voltage. We also study the dependence of spin-dependent properties on external magnetic field and relative angle between the magnetizations of two DMS layers in CdTe/CdMnTe heterostructures by including the DSOC effect. The results show that the DSOC has great different influence on transport properties of electrons with spin up and spin down in the considered system and this aspect may be utilized in designing new spintronics devices.

We investigate spin-dependent transport properties, taking into account DSOC effect in double DMS barrier resonant tunneling diodes. Figure optionsDownload as PowerPoint slide