The effects of temperature dependent recombination rates on performance of InGaN/GaN blue superluminescent light emitting diodes

• In this article In0.2Ga0.8N/GaN-MQW superluminescent light emitting diodes have been investigated.
• The effects of temperature dependent radiative and nonradiative recombination have been studied.
• The investigation reveals that the main loss due to temperature is related to Auger coefficient.
• The study is based on the rate equations model.

The effects of temperature dependent radiative and nonradiative recombination (Shockley–Read–Hall, spontaneous radiative, and Auger coefficients) on the spectral and power characteristics of a blue multiple quantum well (MQW) superluminescent light emitting diode (SLD or SLED) have been studied. The study is based on the rate equations model, where three rate equations corresponding to MQW active region, separate confinement heterostructure (SCH) layer, and spectral density of optical power are solved self-consistently with no k-selection energy dependent gain and quasi-Fermi level functions at steady state. We have taken into account the temperature effects on Shockley–Read–Hall (SRH), spontaneous radiative, and Auger recombination in the rate equations and have investigated the effects of temperature rising from 300 K to 375 K at a fixed current density. We examine this procedure for a moderate current density and interpret the spectral radiation power and light output power diagrams. The investigation reveals that the main loss due to temperature is related to Auger coefficient.

The effects of temperature dependent radiative and nonradiative recombination on the spectral and power characteristics of a blue multiple quantum well superluminescent light emitting diode has been studied.Figure optionsDownload as PowerPoint slide