کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544159 1512883 2015 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Switching feature of EIT-based slow light giant phase-sensitive Kerr nonlinearity in a semiconductor quantum well
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Switching feature of EIT-based slow light giant phase-sensitive Kerr nonlinearity in a semiconductor quantum well
چکیده انگلیسی

A four level inverted Y-type quantum well semiconductor is proposed based on phase-sensitive Kerr nonlinearity with a closed-loop configuration. It is found that as the Rabi-frequency of coupling field increases, the maximal Kerr nonlinearity intensifies and at the same time the probe linear and nonlinear absorption decreases at Telecom wavelength λ=1550nm. The impact of an incoherent pumping field as well as the relative phase of the applied fields on nonlinear optical properties of the QW medium is then discussed. The temporal behavior of the Kerr nonlinearity and the required switching time for switching the nonlinear dispersion are also discussed. The results may be useful for understanding the switching feature of EIT-based slow light Kerr nonlinearity enhancement systems and have potential application in optical information processing and transmission.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 66, February 2015, Pages 309–316
نویسندگان
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