The effects of carrier transport phenomena on the spectral and power characteristics of blue superluminescent light emitting diodes

• In this article In0.2Ga0.8N/GaN-MQW superluminescent light emitting diodes has been investigated.
• The effects of carrier escape, capture, and diffusion rates, and also carrier leakage are calculated.
• The simulation is implemented at 300 K and at a constant current density of 15 kA/cm2.
• The increasing of the drift leakage coefficient decreases the output power, significantly.
• The escape times do not affect the SLD characteristics.

In this article, the effects of carrier escape, capture, and diffusion rates, and also carrier leakage term on the spectral and power characteristics of In0.2Ga0.8N/GaN multiple quantum well (MQW) superluminescent light emitting diodes (SLDs or SLEDs) has been investigated. The investigation is done by means of numerical analysis of the rate equations at steady state. In the model, a wide range of escape, capture, and diffusion times and also drift leakage coefficient correspond to the reported values have been examined in modeling procedure. The simulation is implemented at 300 K and at a constant current density of 15 kA/cm2. Our modeling results show that the escape times do not affect the SLD characteristics, but the variation of capture and diffusion times have moderate effects on output characteristics, while the increasing of the drift leakage coefficient decreases the output power significantly.

The effects of carrier escape, capture, and diffusion rates, and also carrier leakage term on the spectral and power characteristics of In0.2Ga0.8N/GaN multiple quantum well (MQW) superluminescent light emitting diodes (SLDs or SLEDs) has been investigated.Output spectral radiation power of studied SLD versus photon energy and (b7) output power as a function of current density for different drift leakage coefficients.Figure optionsDownload as PowerPoint slide