Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity

• The influences of lateral electric field and hydrogenic donor impurity on the electronic states in coupled quantum dot-ring structure.
• The probability density of the electron ground state is drastically influenced by the paramaters of the stricture and hydrogenic impurity .
• We have found that the influence of lateral electric field on the energy levels strongly depends on the electron localization type.

A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The single electron energy spectrum has been found using the effective mass approximation and an exact diagonalization technique. The electron ground state's probability density has been examined for different values of the confinement energies and depth of dot confinement relative to the bottom of the quantum ring and barrier thickness. The energy level's dependence on the electric field strength has been studied considering the effects of mentioned parameters of the structure and hydrogenic donor impurity.