n doping effect modeling in 1.3 μm GaN0.58yAs1−1.58yBiy/GaAs quantum wells

• Doping effect is modeled in 1.3 μm GaNAsBi/GaAs quantum wells (QWs).
• Owing to doping, a blue-shift of the fundamental transition energy was observed.
• Absorption peak intensity increases significantly with the rise of doping density.
• The well width dependence of the absorption coefficient is also studied.
• Bi composition was adjusted in order to obtain GaNAsBi/GaAs QWs operating at 1.3 µm.

The effect of n doping on the band structure of lattice-matched GaNAsBi/GaAs quantum wells was investigated using a self-consistent calculation combined with the 16-band anti-crossing model. Bi/N incorporation and doping effects can offer a huge potential to engineer the electronic band structure of such materials suitable for the design of photodetectors and emitters operating at 1.3 µm. The increase of the doping density induces a blue-shift of the fundamental transition energy in the doping range between 6×1017 and 5×1018 cm−3. The absorption spectra dependence on the well width are discussed. To maintain the fundamental transition fixed at the wavelength 1.3 µm, we have adjusted the Bi composition for the well width range between 4.5 and 10 nm with respect of the confinement conditions.