The 2D conducting system formed by nanocrystallites CrSi2 in the (111) plane of silicon: New object

• The activation energy is lower than in the case of impurity condition.
• The carrier mobility is very high but it decreases rapidly with the growing temperature.
• The magnetoresistance is linear and decreases rapidly as the temperature rises.

A conductivity quasi-two-dimensional system formed by nanocrystallites CrSi2 located in the crystallographic (111) plane of silicon has been considered. At low temperatures the system exhibits several unique properties: (i) the activation energy in the temperature dependence of resistance is appreciably lower than in the case of impurity condition; (ii) the carrier mobility is very high but it decreases rapidly with the growing temperature; (iii) the magnetoresistance is linear and decreases rapidly as the temperature rises. To explain these features, a model has been proposed which assigns special importance to the charges at the nanocrystallites which appear due to the escape of the electrons to the conduction band (or holes to the valence band) of silicon.