Simulation of field emission behavior from multiple carbon nanotubes in an integrated gate triode configuration

The paper investigates the simulation results of a model for Carbon Nanotube (CNT) field emitters in triode configuration with an integrated gate. Simulation studies have been carried out to analyze and evaluate the performance of a triode device with multiple CNT tips on a silicon substrate. The model has been developed using CST Particle Studio software. The modulating effect of control gate on field emission properties of the device is simulated and dc characteristics at different gate voltages are obtained. It is seen that a small change in gate voltage causes a large change in current between the anode and the cathode. The effect of gate aperture and relative position of the CNT tip with respect to the gate level on field emission is also investigated and modeled. The model helped in providing an understanding of a complete cathode device with an integrated extractor (gate) for potential applications in Vacuum Microelectronic (VME) devices.

Field emission behaviour of an integrated triode structure with multiple CNT tips has been investigated. Maximum emission can be obtained by controlling the array pitch (gate aperture) and by positioning the nanotubes slightly above the gate level. Realization of such devices will provide a miniature intense source for many vacuum microelectronic devices.Figure optionsDownload as PowerPoint slide