Self-assembled strained pyramid-shaped InAs/GaAs quantum dots: The effects of wetting layer thickness on discrete and quasi-continuum levels

• Three-dimensional pyramid-shaped InAs/GaAs quantum dots coupled to their wetting layer were investigated.
• Schrodinger equation was solved in single-band effective mass approximation.
• Isosurfaces of probability density of S-state, P-state, and quasi-continuum state were simulated.
• Effects of quantum dot size and wetting layer thickness on energy eigenvalues of bound states and quasi-continuum states and their transition energies were studied.
• Polarization of the transitions was determined.

The effects of wetting layer thickness and quantum dot (QD) shape on S-state, P-state, and quasi-continuum energy levels of three dimensional strained pyramid-shaped QDs were investigated in the framework of single-band and effective mass approximation. The energy eigenvalues as well as transition energy of the non-zero transitions were calculated as a function of the pyramid height and WL thickness. The polarization of transitions was also studied. An overall red shift was revealed with increasing the WL thickness which differs in value for different transitions. The results were shown to be approved by experimental observations.

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