Electronic heat capacity and conductivity of gapped graphene

It investigated the effects of orderly substituted atoms on density of states, electronic heat capacity and electrical conductivity of graphene plane within tight-binding Hamiltonian model and Green's function method. The results reveal a band gap in the density of states, leading to an acceptor or donor semiconductor. In the presence of foreign atoms, the heat capacity decreases (increases) before (after) the Schottky anomaly. Moreover, the electrical conductivity of the gapped graphene reduces on all ranges of temperature compared to the pristine case. Deductively, all changes in the electronic properties depend on the difference between the on-site energies of the carbon and replaced atoms.

► The effects of dopants on the electronic properties of graphene are investigated.
► The tight-binding model and Green's function technique are implemented.
► Dopants open a band gap in the density of states.