کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544605 1512893 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of low energy Ar-ion bombardment on monolayer Ni/W(1 0 0)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Influence of low energy Ar-ion bombardment on monolayer Ni/W(1 0 0)
چکیده انگلیسی

highlights
• Studies on Ni/W; a less understood material studied system.
• Ultra thin films of Ni grown and the effects of ion bombardment on the same.
• Detailed analysis of the structural and magnetic properties.

The changes in the morphological and structural properties of monolayer nickel thin films on tungsten induced by low energy Ar+ ion bombardment at varying fluencies have been explored using scanning tunneling microscopy and low energy electron diffraction, respectively, in this work. ~1 monolayer (ML) nickel films were grown on W(1 0 0) by electron beam evaporation under ultra high vacuum conditions at room temperature. It was found that the pseudomorphic growth observed in as-grown films was disrupted by the ion bombardment process with additional phases of Ni appearing in the ion bombarded samples. Increase in bombardment time lead to a pronounced phase transition to the hcp phase of Ni. Also, the ion bombardment induced the formation of larger nanostructures (with increasing particulate sizes) from the epitaxial monolayer in the as-deposited sample. Further, the magnetization and magnetic orientation were studied and it was observed that the bombardment induced a weak ferromagnetism in as-grown paramagnetic Ni film.

The changes in the morphological and structural properties of monolayer nickel thin films on tungsten induced by low energy Ar+ ion bombardment at varying fluencies have been explored using scanning tunneling microscopy and low energy electron diffraction. Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 56, February 2014, Pages 337–341
نویسندگان
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