کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544669 1512895 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Angular dependence of shot noise in the presence of Rashba spin–orbit coupling in semiconductor spintronics junctions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Angular dependence of shot noise in the presence of Rashba spin–orbit coupling in semiconductor spintronics junctions
چکیده انگلیسی


• We have investigated the RSOC effect on current and shot noise in CdTe/CdMnTe junctions, theoretically.
• Our method is based on an effective mass in the presence of electric and magnetic fields.
• Magnetization of the DMS, has been used using the mean-field approximation in low magnetic field.
• The RSOC has great different influence on the transport properties of tunneling electrons.

We investigate spin-dependent current and shot noise, taking into account the Rashba spin–orbit coupling (RSOC) effect in double diluted magnetic semiconductor (DMS) barrier resonant tunneling diodes. The calculation is based on an effective mass approach. The magnetization of DMS is calculated by the mean-field approximation in low magnetic field. The spin-splitting of DMS depends on the sp–d exchange interaction. We also examine the dependence of transport properties of CdTe/CdMnTe heterostructures on applied voltage and relative angle between the magnetization of two DMS layers. It is found that the RSOC has great different influence on the transport properties of tunneling electrons with spin-up and spin-down, which have different contributions to the current and the shot noise. Also, we can see that the RSOC enhances the spin polarization of the system, which makes the nanostructure a good candidate for new spin filter devices. Thus, these numerical results may shed light on the next applications of quantum multilayer systems and make them a good choice for future spintronics devices.

We investigate spin-dependent transport properties, taking into account RSOC effect in double DMS barrier resonant tunneling diodes. The calculation is based on an effective mass approach and mean-field approximation in low magnetic field. It is found that the RSOC on CdTe/CdMnTe heterostructures has great different influence on the transport properties of tunneling electrons with spin-up and spin-down, which have different contributions to the current and the shot noise.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 54, December 2013, Pages 59–64
نویسندگان
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