Photoluminescence intensity enhancement in self-assembled InAs quantum dots grown on (3 1 1)B and (1 0 0) GaAs substrates and coated with gold nanoparticles

• Photoluminescence intensity enhancement has been observed for self-assembled InAs quantum dots (QDs) coated with gold nanoparticles and associated to surface Plasmon (SP) coupling effects.
• Photoluminescence intensity enhancement was investigated for different temperatures, excitation energy, laser power, GaAs cap layer thickness, and QD morphology.
• It was found that the SP–QD coupling efficiency increases with the increase of the temperature.
• It was also observed that this effect is enhanced for QDs grown on (3 1 1)B GaAs.

Photoluminescence intensity enhancement has been observed for self-assembled InAs quantum dots (QDs) coated with gold nanoparticles and associated to surface plasmon (SP) coupling effects. This effect was investigated for different temperatures, excitation energy, laser power, GaAs cap layer thickness, and QD morphology. It was found that the SP–QD coupling efficiency increases with the increase of the temperature. It was also observed that this effect is enhanced for QDs grown on (3 1 1)B GaAs oriented substrates.