کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544711 1512895 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural, electronic properties and stability of Ag-doped GaAs nanowires: First-principles study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Structural, electronic properties and stability of Ag-doped GaAs nanowires: First-principles study
چکیده انگلیسی
First-principles computations have been addressed to determine the effects of Ag substitution to the structural, electronic properties and stability of Ag-doped GaAs NW. Our results show that the substitutional Ag energetically prefers to substitute the surface Ga (Ef=−0.529 eV) under As-rich conditions and introduces a much shallow (0.19 eV above the Fermi) acceptor level, which is of typical p-type behavior. With the increase in the Ag concentration, the p-type character gradually weakens and n-type character arises. Thus, one can expect to synthesize Ag-doped GaAs NWs for p-type or n-type applications with the control of Ag concentration and its microarrangement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 54, December 2013, Pages 301-307
نویسندگان
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