کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1544711 | 1512895 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, electronic properties and stability of Ag-doped GaAs nanowires: First-principles study
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural, electronic properties and stability of Ag-doped GaAs nanowires: First-principles study Structural, electronic properties and stability of Ag-doped GaAs nanowires: First-principles study](/preview/png/1544711.png)
چکیده انگلیسی
First-principles computations have been addressed to determine the effects of Ag substitution to the structural, electronic properties and stability of Ag-doped GaAs NW. Our results show that the substitutional Ag energetically prefers to substitute the surface Ga (Ef=â0.529Â eV) under As-rich conditions and introduces a much shallow (0.19Â eV above the Fermi) acceptor level, which is of typical p-type behavior. With the increase in the Ag concentration, the p-type character gradually weakens and n-type character arises. Thus, one can expect to synthesize Ag-doped GaAs NWs for p-type or n-type applications with the control of Ag concentration and its microarrangement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 54, December 2013, Pages 301-307
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 54, December 2013, Pages 301-307
نویسندگان
L. Wan, T. Gao,