Effect of substrate temperature on conductivity and microstructures of boron-doped silicon nanocrystals in SiCx thin films

• SiC-matrix p-type Si-NCs were doped through the heavily B-doped CZ-Si target.
• Conductivity increased by 10–100 times when Ts was 200 °C.
• Crystalline fraction increased by ∼5%when Ts was 200 °C.
• fcc Si-NCs formed in the surface layer when Ts was 200 °C.

Boron (B)-doped silicon-rich SiC (SiCx, 0

When Ts was ∼200 °C, crystalline fraction and conductivity of thin films increased, and fcc Si-NCs were formed in the surface layer.Figure optionsDownload as PowerPoint slide