Photoluminescence variation in InAs quantum dots embedded in InGaAs/AlGaAs quantum wells at thermal annealing

► Photoluminescence (PL) has been studied in quantum wells with embedded InAs QDs. ► PL and its temperature dependences have been studied in dependence on the capping layers. ► PL and its temperature dependences have been studied in dependence on thermal annealing. ► Thermal quenching of integrated PL revealed the fast thermal decay of the integrated PL. ► Thermal stability of the structure with AlGaAs capping layer has been analyzed.