Graphene field effect transistor improvement by graphene–silicon dioxide interface modification

The dependence of the electrical properties of backgate graphene field effect transistor on the silicon surface preparation techniques prior to graphene exfoliation was studied. The influence of standard wet chemical cleaning, with and without a finishing step in an oxygen plasma are compared to a surface preparation finished by hexamethyldisilazane deposition. The carrier drift mobility of backgate p-channel graphene transistors was determined from the measured transconductance. The backgate graphene field effect transistor fabricated by bonding graphene on silicon dioxide modified with hexamethydisilazane showed an improved carrier drift mobility at low electric fields and higher transconductance.

► SiO2 graphene interface modification improves the properties of graphene field effect devices.
► Graphene back gate field effect transistors were fabricated; hexamethyldisilazane was used.
► Drift mobility was increased and the Dirac point shift was reduced.