Effect of graphene/4H-SiC(0 0 0 1) interface on electrostatic properties in graphene

Electrostatic properties, quantum capacitance (Cq) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for comparative study, viz., graphene exfoliated and deposited on 4H-SiC(0 0 0 1)—DG, and graphene grown epitaxially on 4H-SiC(0 0 0 1)—EG. We observed a distinctly lower screening length (rscr) and Cq while wider variations in the LDOS for EG. Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1), which is known to be more or less defective having the presence of positive charges.

Research highlights
► Local electrostatic properties are evaluated for graphene on 4H-SiC(0 0 0 1).
► Lower screening length and Cq are observed for epitaxial graphene on 4H-SiC(0 0 0 1).
► Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1).
► The results are compared with graphene deposited on 4H-SiC(0 0 0 1).