Low-operating-voltage 1.5-μm-electroluminescent device with an Er-doped silicon suboxide layer and electron injection from tin oxide

► A low-operating-voltage silicon-oxide-based electroluminescent device is proposed and demonstrated. ► An Er-doped silicon suboxide with low oxygen content is employed as an active layer. ► A thin active layer and a tin-oxide electron injection layer are key issues for realizing low voltage operation.