A new nanoscale and high temperature field effect transistor: Bi level FinFET

In this paper, we propose a new Bi Level Fin Field Effect Transistor (BL-FinFET) where the fin regions consist of Bi level. The novel features of the BL-FinFET are simulated and compared with a Conventional FinFET (C-FinFET). The three-dimensional and two-carrier device simulation demonstrate that the application of Bi level to the FinFET structure results in an ideal threshold voltage roll-off, reduced DIBL, excellent behavior in voltage gain at high temperatures and the gate capacitance improvement when compared with the C-FinFET. Also, this paper illustrates the benefits of the high performance BL-FinFET device over the conventional one and expands the application of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs) to high temperature.

► We have proposed a new Bi Level Fin Field Effect Transistor (BL-FinFET).
► The fin regions in the proposed structure consist of Bi level.
► The features of a BL-FinFET are simulated and compared with a conventional FinFET.
► The results show that the BL-FinFET has the best behavior at high temperature.