Rectifying properties of sol–gel synthesized Al:ZnO/Si (N–n) thin film heterojunctions

We report on the rectifying behavior of sol–gel synthesized Al (1 and 3 at%):ZnO/Si (N–n) thin film isotype heterojunctions. The films were dense and uniform over the substrate and show polycrystalline morphology with defined grain boundaries. The current–voltage (I–V) characteristics of the junctions at room temperature and high temperature in air ambient were found to be asymmetric with an increase in rectification ratio (If/Ir) from 1.29 to 3.70 for 1 at% and from 0.60 to 2.54 for 3 at% of Al (at a bias voltage of 5 V) for increase in temperature upto 150 °C. The I–V characteristics of the junctions were explained on the basis of high temperature carrier injection and single carrier dynamics.

Al:ZnO/Si (N–n) single carrier isotype heterojunctions were fabricated via sol–gel technique. The heterojunctions show temperature dependent rectifying behavior with asymmetric current–voltage characteristics.Figure optionsDownload as PowerPoint slideHighlights
► Al:ZnO/Si (N–n) heterojunctions with varying Al doping concentrations were fabricated using low cost sol–gel technique.
► Heterojunctions show asymmetric current–voltage (I–V) characteristics.
► Rectification ratio increases with increase in temperature upto 150 °C.
► These heterojunctions could have applications in single carrier junction devices.