Hydrostatic pressure and electric-field effects on the electronic and optical properties of InAs spherical layer quantum dot

A theoretical study of the e–h ground transition in InAs layer quantum dots under hydrostatic pressure and temperature in presence (absence) of the electric field is performed. The quantum dots have spherical shape geometry with inner and outer radiuses. In the framework of the envelope-function approximation the electronic states are evaluated as a function of the hydrostatic pressure and temperature. The pressure–temperature dependence of all parameters entering into the description of the e–h transitions have been taken into account. The results obtained taking the infinite barrier model and the parabolic dispersion. It is shown that the variation of the e–h ground transition can be modeled using the simple infinite hard wall model with an effective dot radiuses as a fitting parameter.

► The hydrostatic pressure and temperature effects on spherical layer quantum dot was investigated.
► Ground transitions between electron and hole were involved in the presence (absence) of the electric field.
► Because of the decrease (increase) of electron energy with pressure (temperature) there is a red shift (blue shift).
► The results remark the importance of pressure–temperature effects over the optical properties.