Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires under hydrostatic pressure

► In concentration affects the binding energy only for radii nearby binding energy maxima. ► The pressure dependency is much weaker than GaAs/Ga1−xAlx based CQWWs. ► Binding energy dependency to impurity position and the pressure is more pronounced for on center impurities.