DFT study on influence of Si and Ge doping on the chemical shielding tensors in the armchair AlN nanotubes

In this work we investigate the influence of Si and Ge doping on the electrostatic structure properties and NMR parameters of armchair model of the (4, 4) Aluminum nitride nanotubes (AlNNTs) with a 1-nm length and consisting of 32 Al and 32 N atoms.