کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1545536 997596 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Magneto-exciton in a GaN/Ga1−xAlxN quantum dot
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Magneto-exciton in a GaN/Ga1−xAlxN quantum dot
چکیده انگلیسی
Magneto-exciton bound donor is investigated theoretically in a GaN/Ga1−xAlxN quantum dot within the framework of single band effective mass approximation and compared with the experimental results. Binding energies on excitons bound hydrogenic donors and the diamagnetic susceptibility are obtained as a function of dot radius and magnetic field. The valence-band anisotropy is included in our theoretical model using different hole masses in different spatial directions. Zeeman effect is calculated through the energy dependent effective mass. The dependence of donor bound exciton diamagnetic shift is found. The interband optical transition of GaN/Ga1−xAlxN dot is computed with various structural parameters in the influence of magnetic field. Our results show that (i) quantum size, the magnetic field and the interband optical transitions have a considerable influence on neutral donor exciton states, (ii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iii) the found diamagnetic shift is agreed with the other experimental investigator [Yoichi Yamada et al., 2000 [26]].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 43, Issue 1, November 2010, Pages 322-326
نویسندگان
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