کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1545536 | 997596 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magneto-exciton in a GaN/Ga1âxAlxN quantum dot
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Magneto-exciton bound donor is investigated theoretically in a GaN/Ga1âxAlxN quantum dot within the framework of single band effective mass approximation and compared with the experimental results. Binding energies on excitons bound hydrogenic donors and the diamagnetic susceptibility are obtained as a function of dot radius and magnetic field. The valence-band anisotropy is included in our theoretical model using different hole masses in different spatial directions. Zeeman effect is calculated through the energy dependent effective mass. The dependence of donor bound exciton diamagnetic shift is found. The interband optical transition of GaN/Ga1âxAlxN dot is computed with various structural parameters in the influence of magnetic field. Our results show that (i) quantum size, the magnetic field and the interband optical transitions have a considerable influence on neutral donor exciton states, (ii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iii) the found diamagnetic shift is agreed with the other experimental investigator [Yoichi Yamada et al., 2000 [26]].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 43, Issue 1, November 2010, Pages 322-326
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 43, Issue 1, November 2010, Pages 322-326
نویسندگان
M. Revathi, ChangKyoo Yoo, A. John Peter,