Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode

► The novel PtSi Schottky barrier diode (SBD) based on SiNWs is fabricated. ► The distinction between PtSi/SiNWs and PtSi/bulk Si structures is investigated. ► The Richardson plot is used to extract accurately the electrical parameters. ► The interfacial layer and the series resistance cause the non-ideal SBD.