Electronic transport properties of an armchair boron-nitride nanotube

We present a theoretical study of electron transport properties through boron-nitride nanotube (BNNT) and contrast them to those of carbon nanotube (CNT). The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green's function technique and relies on the Landauer–Bütikker formalism as the basis for studying the current–voltage characteristic of this system. We use an armchair single-walled BNNT in the CNT/BNNT/CNT structure. We numerically compute the transport properties in terms of transmission and current–voltage characteristic. Our calculations show that the electron transport can open a conduction gap in the CNT/BNNT/CNT structure.

Graphical AbstractWe have investigated the electron transport properties through an armchair single-walled (n, n) boron-nitride nanotube (BNNT) in CNT/BNNT/CNT structure.Figure optionsDownload as PowerPoint slideHighlights
► We use the NEGF method and the tight-binding Hamiltonian model.
► We investigate the electronic density of states, transmission, and current–voltage.
► We use an armchair single-walled BNNT in the CNT/BNNT/CNT structure.
► Electron transport in the CNT/BNNT/CNT structure can open a conduction gap.