کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1545649 997598 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Equilibrium critical size of coherent InSb/GaSb quantum dot
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Equilibrium critical size of coherent InSb/GaSb quantum dot
چکیده انگلیسی

We present a finite element method to simulate the strain field in InSb/GaSb quantum dots in the framework of anisotropic elasticity, before and after the onset of plastic relaxation. Taking the interaction between dislocation and free surface into consideration, the model directly calculates the residual strain in the dislocated system. Based on the energy balance between the two isolated states, the equilibrium critical size is determined. In the criterion, only the non-elastic dislocation core energy should be considered separately. The results are in satisfactory agreement with experimental data.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 9, July 2010, Pages 2402–2405
نویسندگان
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