کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1545658 | 997598 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Neutral vacancy-defect-induced magnetism in SiC monolayer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We perform first-principles calculations to investigate the spin-polarization of vacancy defects in SiC monolayer. We show that Si and C vacancy defects play different roles in the magnetism of SiC monolayer. Local magnetic moments can be induced by the presence of Si vacancy (VSi) whereas no spin-polarization occurs in C vacancy (VC) defects. The induced states are due to the unpaired electrons on carbon atoms surrounding the silicon vacancy. Interestingly, starting from different initial spin distributions, two spin configurations with S=1 and 2 are obtained, and the energy difference between them is only 39 meV. The spatial distribution of spin density displays the features of ferrimagnetic alignments for the most stable configuration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 9, July 2010, Pages 2451–2454
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 9, July 2010, Pages 2451–2454
نویسندگان
Xiujie He, Tao He, Zhenhai Wang, Mingwen Zhao,