Self-assembling conditions of 1N4Al nanoclusters in GaBv-rich AlxGa1-xNyB1-yV (BV=P, As, Sb) alloys

Self-assembling conditions of Al and nitrogen atoms in GaBV-rich AlxGa1-xNyB1-yV (BV=P, As, Sb) is represented by phase diagrams. Self-assembling results in the formation of 1N4Al tetrahedral nanoclusters. The main origin of an occurrence of such clusters is preferential Al–N and GaBV bonding over AlBV and GaN one. At temperatures 1123, 853 and 763 K the majority of nitrogen atoms should be in nanoclusters in the GaP-, GaAs- and GaSb-rich alloys at x>4.5×10−2, x>2.07×10−2 and x>2.74×10−3, respectively, and at the nitrogen content y=1×10−4. The dependencies of a fraction of nitrogen atoms situated in 1N4Al nanoclusters on the Al content are estimated.