کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1545739 997601 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dia- and paramagnetism and total susceptibility of GaAs quantum dots with Gaussian confinement
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Dia- and paramagnetism and total susceptibility of GaAs quantum dots with Gaussian confinement
چکیده انگلیسی

The total magnetization and susceptibility arising from dia- and paramagnetic effects in a Gaussian quantum dot are calculated and their dependence on temperature (T) and magnetic field (B) are studied. The effect of spin on the magnetic susceptibility is also investigated. It is shown that at low temperature and low magnetic field the system in general shows paramagnetism and at high temperature and high magnetic field the diamagnetic state is found to be a preferred state. The paramagnetic–diamagnetic phase diagram is shown in the B–T plane.

Figure optionsDownload as PowerPoint slideHighlights
► Magnetization is studied in a GaAs quantum dot including spin at finite T.
► At low T and low B, the system shows a paramagnetic behavior.
► At high T and high B, however, diamagnetic state is a preferred state.
► The magnetic phase diagram is plotted for a GaAs dot.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 44, Issue 9, June 2012, Pages 1826–1831
نویسندگان
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