کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1545806 997602 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scanning tunneling microscopy method for electron transport measurement of individual nanowires
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Scanning tunneling microscopy method for electron transport measurement of individual nanowires
چکیده انگلیسی

Extending the scanning tunneling microscopy (STM) techniques, we have successfully developed a novel approach to make clean electrical contacts to individual semiconductor nanowires to form two-terminal devices for electron transport measurement. This versatile technique avoids contact problems often encountered in lithographically patterned devices due to contamination or damage from high energy electrons or ion beams. The devices made using present technique form reliable Schottky barriers at the semiconductor–metal contacts. Some measurement results based on this type of method will be shown.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 4, February 2010, Pages 799–802
نویسندگان
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