کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1545852 997602 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier density dependence of spin–orbit interaction in InAsSb quantum wells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Carrier density dependence of spin–orbit interaction in InAsSb quantum wells
چکیده انگلیسی

We investigated the spin–orbit interaction (SOI) in Al0.1In0.9Sb/Sn-doped InAs0.1Sb0.9 quantum wells (QWs) with different doping levels using the weak anti-localization effect in the magneto-resistance. The inelastic scattering time is close to the T−1 law predicted theoretically for electron–electron interaction, and the spin–orbit scattering time is temperature independent as expected for the D'yakonov–Perel mechanism. The carrier-density dependence of zero-field spin-splitting energy extracted from the fits of magneto-resistance was examined by the theoretical calculation. The result confirms that the Dresselhaus SOI is much larger than the Rashba SOI in our QWs. The dominance of the Dresselhaus term in SOI originates in the large weight factor of InSb-based alloy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 4, February 2010, Pages 975–978
نویسندگان
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