Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio

By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1×107. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.

► Fabrication of graphene field effect transistors without needing to transfer graphene.
► In-situ grown graphene transistors are realized directly on oxidized silicon substrate.
► Bilayer graphene transistors possess an extremely high on/off-current ratio up to 1E7.
► Silicon CMOS compatible fabrication process allowing simple and low-cost integration.
► Graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.