The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

The density property of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. The saturation density of InAs/GaAs QDs was experimentally demonstrated. The InAs deposition thickness (InAs coverage) when the saturation density reached was also found. Furthermore, we systemically analyzed the influences of growth temperature and growth rate of InAs/GaAs QDs on the saturation density. Finally, BInAs/GaAs QDs with room-temperature photoluminescence (RT-PL) wavelength of 1320 nm and full width at half maximum (FWHM) of 40 mev were achieved for the first time, and the effects of boron incorporation on InAs/GaAs QDs were studied.

Graphical AbstractThe saturation density property of (B)InAs/GaAs quantum dots and the influence of growth temperature and growth rate were investigated. BInAs QDs with wavelength of 1320 nm was achieved and the effect of boron incorporated into QDs was studied.Figure optionsDownload as PowerPoint slideHighlights
► Existence of saturation density of InAs QDs was demonstrated.
► Influence of growth temperature and growth rate on the saturation density was investigated.
► BInAs/GaAs QDs with wavelength of 1320 nm and FWHM of 40 mev were achieved.
► Change of QDs property with different boron incorporation amount was analyzed.