Three dimensional simulator of the single electron transistor based on ISIS structure

► We present the simulator of single electron transistor (SET) based on ISIS structure. ► In the calculations we use: 3D Poisson equation solution method and Green's function method. ► The model is realized by use the hybrid boundary and finite difference elements method. ► The computer program is realized in C++. ► We present results: 3D potential, quantum conductance and current-voltage characteristic.