Forward and reverse bias dependence of radiative recombination efficiency in green (In,Ga)N quantum well diodes

► Radiative efficiency is studied in (In,Ga)N quantum well diodes with varying bias. ► Photoluminescence efficiency decreases, when the forward bias is very high. ► Decrease of PL is due to reduced e-h wave function overlap in the wells. ► Electroluminescence droop may be caused by this effect under the high bias.