Optimal design of heterostructure tunnel diode with nonlinear current–voltage characteristic

Optimal design applied to an AlξGa1−ξAsAlξGa1−ξAs heterostructure tunnel diode is used to achieve a parametrically defined nonlinear current–voltage characteristic. The design predicts that a significant reduction in spurious frequency components from a switching RF mixer can be realized using a device that is less than 17 nm thick.

► Optimal design of tunnel diode nonlinear current–voltage characteristic.
► Nonlinear current–voltage characteristic improves RF mixer performance.
► Optimal design methodology may be applied to different semiconductor devices.