Non-parabolicity and anisotropy effects on the conduction-electron effective g factor in GaAs-Ga1-xAlxAs quantum well wires

The effective electron Landé factor in GaAs-Ga1-xAlxAs rectangular quantum well wires, under magnetic fields applied along the wire axis, is studied by taking into account the non-parabolicity and anisotropy of the conduction band within the Ogg-McCombe effective Hamiltonian. Confinement effects on the electron wavefunctions are explored in order to evaluate its influence on the behavior of the effective Landé factor. Calculations for the electron g∥ factor in GaAs-Ga1-xAlxAs rectangular quantum well wires are compared with the previous theoretical results obtained for GaAs-Ga1-xAlxAs cylindrical quantum well wires. Such comparison clearly indicates the influence of the wire shape on the electron Landé factor in GaAs-Ga1-xAlxAs quantum well wires.