کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546073 997607 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characteristics of ZnO:In thin films prepared by RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Characteristics of ZnO:In thin films prepared by RF magnetron sputtering
چکیده انگلیسی

In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10−3 Ω cm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 10, October 2009, Pages 1819–1823
نویسندگان
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