کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546078 | 997607 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Polaronic effects on laser dressed donor impurities in a quantum well
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of laser field on the binding energy in a GaAs/Ga11âxAlxAs quantum well within the single band effective mass-approximation is investigated. Exciton binding energy is calculated as a function of well width with the renormalization of the semiconductor gap and conduction valence effective masses. The calculation includes the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model. The 2D Hartree-Fock spatial dielectric function and the polaronic effects have been employed in our calculations. We investigate that reduction of binding energy in a doped quantum well due to screening effect and the intense laser field leads to semiconductor-metal transition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 10, October 2009, Pages 1841-1847
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 10, October 2009, Pages 1841-1847
نویسندگان
N. Radhakrishnan, A. John Peter,