کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546083 997607 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs
چکیده انگلیسی
In this paper, a new nanoscale graded channel gate stack (GCGS) double-gate (DG) MOSFET structure and its 2-D analytical model have been proposed, investigated and expected to suppress the short-channel-effects (SCEs) and improve the subthreshold performances for nanoelectronics applications. The model predicts a shift, increasing potential barrier, in the surface potential profile along the channel, which ensures a reduced threshold voltage roll-off and DIBL effects. In the proposed structure, the subthreshold current and subthreshold swing characteristics are greatly improved in comparison with the conventional DG MOSFETs. The developed approaches are verified and validated by the good agreement found with the numerical simulation. (GCGS) DG MOSFET can alleviate the critical problem and further improve the immunity of SCEs of CMOS-based devices in the nanoscale regime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 10, October 2009, Pages 1872-1877
نویسندگان
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