کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546193 | 997610 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and optical properties of catalyst-free InP nanowires on Si (1Â 0Â 0) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Catalyst-free InP nanowires were grown on Si (1Â 0Â 0) substrates by metal-organic chemical vapor deposition. Morphology, crystal structure, photoluminescence, and Raman scattering properties of the nanowires were investigated. Most nanowires are long and straight; the angles between the nanowires and the Si substrate are diverse. The photoluminescence peak shows blue-shift from the band gap energy of bulk InP. Both the blue-shift of photoluminescence peak and the full width at half-maximum of photoluminescence spectrum increase with decreasing nanowires growth temperature. Due to laser-induced heating, the TO and LO phonon peaks of the nanowires reveal downshift and asymmetric broadening compared with those of bulk InP at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 5, March 2010, Pages 1540-1543
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 5, March 2010, Pages 1540-1543
نویسندگان
Shuzhen Yu, Guoqing Miao, Yixin Jin, Ligong Zhang, Hang Song, Hong Jiang, Zhiming Li, Dabing Li, Xiaojuan Sun,