کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546237 997610 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Biased driven resonant tunneling through a double barrier graphene based structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Biased driven resonant tunneling through a double barrier graphene based structure
چکیده انگلیسی

The effects of the external homogeneous electric field on the transmission coefficient and the ballistic conductance are studied theoretically for an electron across a graphene double barrier structure. The Klein transmission is noted for the normal to near normal incidence only. The electrons are found to be confined by the external static electric field for the glancing incidence and not for the normal incidence. Although the conductance profile for the lower barrier widths is almost sinusoidal in nature, some interesting features occur for the higher barrier width of the structure. The oscillations in the below barrier conductance are greatly suppressed by the external field. Some negative differential conducting regions are also noted, being quite sensitive to the Fermi energy of the system.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 5, March 2010, Pages 1781–1786
نویسندگان
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