Built-in electric field effect on the hydrogenic donor impurity in wurtzite InGaN quantum dot

The donor binding energy of the hydrogenic impurity is calculated as functions of the impurity position and structural parameters of wurtzite (WZ) InGaN/GaN quantum dot (QD). Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the QD. When the impurity is located at the right boundary of the WZ InGaN/GaN QD, the donor binding energy is insensitive to the dot height, and it is largest when In composition x=0.3x=0.3 for different WZ InGaN/GaN QD. Realistic cases, including the impurity in the QD and the surrounding barriers.