کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1546275 997611 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spin–orbit interactions in high In-content InGaAs/InAlAs inverted heterojunctions for Rashba spintronic devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Spin–orbit interactions in high In-content InGaAs/InAlAs inverted heterojunctions for Rashba spintronic devices
چکیده انگلیسی

We have studied molecular beam epitaxy growth and magneto-transport of novel InxGa1−xAs/InxAl1−xAs (x=0.5 and 0.75) inverted modulation-doped heterojunctions. Large Rashba-type spin–orbit coupling constants, α∼20×10−12 eV m, as well as high two-dimensional electron mobilities, μe∼2×105 cm2/V s, have been confirmed at ∼1.5 K. It was also found that larger α’s were confirmed in the higher In-content heterojunctions with thinner InGaAs surface channel. These results are qualitatively explained by the differences in the energy bandgap, the electron effective mass, and the mean electric field strength at the heterojunction interface. The above features of α and μe, seem to be promising in the applications in the spintronic devices as well as in the mesoscopic structures for novel spin physics based on the Rashba spin–orbit interaction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 8, June 2008, Pages 2823–2828
نویسندگان
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