3-D numerical modeling and simulation of nanoscale FinFET for the application in ULSI circuits

► A direct 3-D numerical solution is carried out. ► Adopted method validates more accurately with the experimental values. ► Quantum mechanical effects are included in the 3-D simulation directly without reducing to 1-D Schrödinger equation. ► New boundary conditions are used for solving the 3-D Schrödinger equation. ► Simulation time is very much reduced.