Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures

Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) were observed in photoluminescence spectra of GaAs/In0.3Ga0.7As/GaAs quantum wells. The emission bands due to e1–hh1 and e1–lh1 transitions were found to have a doublet character explained by the exchange interaction of excitons in quantum wells. Emission bands due to radiative Eb–hh1, Eb–lh1 transitions in the buffer GaAs layer are observed in the region of 1.5 eV.

► Luminescence due to recombination of excitons in GaAs/In0.3Ga0.7As quantum wells studied.
► Emission maxima related to excitons formed with heavy and light holes found.
► Emission bands due to e1–hh1 and e1–lh1 transitions found to have a doublet character.
► Doublet emission is explained by the exchange interaction of excitons in quantum wells.
► Emission bands due to radiative transitions in the buffer GaAs layer observed around 1.5 eV.